Gallium Nitride (GaN) FET technology offers significant
advantages over Gallium Arsenide (GaAs) due to
higher RF power density and higher output

- High bandgap allows for higher RF power density and
junction temperature while maintaining mission

- High breakdown allows for high drain voltage
operation (~50 V), increasing the efficiency of the
power converter, and reducing I2R losses.

- Higher power density and operational voltage results
in significant prime efficiency improvement and mass

- Linear Space Technology’s Predistortion Linearization
technology provides improved linear performance even
relatively close to saturation for higher efficiency.

Linear Space Technology (LST) designs and
manufactures Linearized SSPAs and Linearized Driver
Modules for flight applications.